PART |
Description |
Maker |
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM 70ns; Ultra low power 64K x 16 CMOS SRAM 85ns; Ultra low power 64K x 16 CMOS SRAM 100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
IS65WV25616BLL IS65WV25616BLL-55TA1 IS65WV25616BLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
IS65C10248AL IS65C10248AL-55CTLA3 IS65C10248AL-55M |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
IS62WV2568BLL-55BLI IS62WV2568ALL-70BI IS62WV2568B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
BS62UV2001TI BS62UV2001 BS62UV2001SC BS62UV2001SI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
|
BSI[Brilliance Semiconductor]
|
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
|
Brilliance Semiconductor
|